Tag: onsemi

Powering the Future: Onsemi and GlobalFoundries Forge “Made in America” GaN Alliance for AI and EVs

In a move set to redefine the power semiconductor landscape, onsemi (NASDAQ: ON) and GlobalFoundries (NASDAQ: GFS) have announced a strategic collaboration to develop and manufacture 650V Gallium Nitride (GaN) power devices. This partnership, finalized in late December 2025, marks a critical pivot in the industry as it transitions from traditional 150mm wafers to high-volume 200mm GaN-on-silicon manufacturing. By combining onsemi’s leadership in power systems with GlobalFoundries’ large-scale U.S. fabrication capabilities, the alliance aims to address the skyrocketing energy demands of AI data centers and the efficiency requirements of next-generation electric vehicles (EVs).

The immediate significance of this announcement lies in its creation of a robust, domestic "Made in America" supply chain for wide-bandgap semiconductors. As the global tech industry faces increasing geopolitical pressures and supply chain volatility, the onsemi-GlobalFoundries partnership offers a secure, high-capacity source for the critical components that power the modern digital and green economy. With customer sampling scheduled to begin in the first half of 2026, the collaboration is poised to dismantle the "power wall" that has long constrained the performance of high-density server racks and the range of electric transport.

Scaling the Power Wall: The Shift to 200mm GaN-on-Silicon

The technical cornerstone of this collaboration is the development of 650V enhancement-mode (eMode) lateral GaN-on-silicon power devices. Unlike traditional silicon-based MOSFETs, GaN offers significantly higher electron mobility and breakdown strength, allowing for faster switching speeds and reduced thermal losses. The move to 200mm (8-inch) wafers is a game-changer; it provides a substantial increase in die count per wafer compared to the previous 150mm industry standard, effectively lowering the unit cost and enabling the economies of scale necessary for mass-market adoption.

Technically, the 650V rating is the "sweet spot" for high-efficiency power conversion. Onsemi is integrating its proprietary silicon drivers, advanced controllers, and thermally enhanced packaging with GlobalFoundries’ specialized GaN process. This "system-in-package" approach allows for bidirectional power flow and integrated protection, which is vital for the high-frequency switching environments of AI power supplies. By operating at higher frequencies, these GaN devices allow for the use of smaller passive components, such as inductors and capacitors, leading to a dramatic increase in power density—essentially packing more power into a smaller physical footprint.

Initial reactions from the industry have been overwhelmingly positive. Power electronics experts note that the transition to 200mm manufacturing is the "tipping point" for GaN technology to move from niche applications to mainstream infrastructure. While previous GaN efforts were often hampered by yield issues and high costs, the combined expertise of these two giants—utilizing GlobalFoundries’ mature CMOS-compatible fabrication processes—suggests a level of reliability and volume that has previously eluded domestic GaN production.

Strategic Dominance: Reshaping the Semiconductor Supply Chain

The collaboration places onsemi (NASDAQ: ON) and GlobalFoundries (NASDAQ: GFS) in a formidable market position. For onsemi, the partnership accelerates its roadmap to a complete GaN portfolio, covering low, medium, and high voltage applications. For GlobalFoundries, it solidifies its role as the premier U.S. foundry for specialized power technologies. This is particularly timely following Taiwan Semiconductor Manufacturing Company’s (NYSE: TSM) announcement that it would exit the GaN foundry service market by 2027. By licensing TSMC’s 650V GaN technology in late 2025, GlobalFoundries has effectively stepped in to fill a massive vacuum in the global foundry landscape.

Major tech giants building out AI infrastructure, such as Microsoft (NASDAQ: MSFT) and Google (NASDAQ: GOOGL), stand to benefit significantly. As AI server racks now demand upwards of 100kW per rack, the efficiency gains provided by 650V GaN are no longer optional—they are a prerequisite for managing operational costs and cooling requirements. Furthermore, domestic automotive manufacturers like Ford (NYSE: F) and General Motors (NYSE: GM) gain a strategic advantage by securing a U.S.-based source for onboard chargers (OBCs) and DC-DC converters, helping them meet local-content requirements and insulate their production lines from overseas disruptions.

The competitive implications are stark. This alliance creates a "moat" around the U.S. power semiconductor industry, leveraging CHIPS Act funding—including the $1.5 billion previously awarded to GlobalFoundries—to build a manufacturing powerhouse. Existing players who rely on Asian foundries for GaN production may find themselves at a disadvantage as "Made in America" mandates become more prevalent in government and defense-linked aerospace projects, where thermal efficiency and supply chain security are paramount.

The AI and Electrification Nexus: Broadening the Horizon

This development fits into a broader global trend where the energy transition and the AI revolution are converging. The massive energy footprint of generative AI has forced a reckoning in data center design. GaN technology is a key pillar of this transformation, enabling the high-efficiency power delivery units (PDUs) required to keep pace with the power-hungry GPUs and TPUs driving the AI boom. By reducing energy waste at the conversion stage, these 650V devices directly contribute to the decarbonization goals of the world’s largest technology firms.

The "Made in America" aspect cannot be overstated. By centering production in Malta, New York, and Burlington, Vermont, the partnership revitalizes U.S. manufacturing in a sector that was once dominated by offshore facilities. This shift mirrors the earlier transition from silicon to Silicon Carbide (SiC) in the EV industry, but with GaN offering even greater potential for high-frequency applications and consumer electronics. The move signals a broader strategic intent to maintain technological sovereignty in the foundational components of the 21st-century economy.

However, the transition is not without its hurdles. While the performance benefits of GaN are clear, the industry must still navigate the complexities of integrating these new materials into existing system architectures. There are also concerns regarding the long-term reliability of GaN-on-silicon under the extreme thermal cycling found in automotive environments. Nevertheless, the collaboration between onsemi and GlobalFoundries represents a major milestone, comparable to the initial commercialization of the IGBT in the 1980s, which revolutionized industrial motor drives.

From Sampling to Scale: What Lies Ahead for GaN

In the near term, the focus will be on the successful rollout of customer samples in the first half of 2026. This period will be critical for validating the performance and reliability of the 200mm GaN-on-silicon process in real-world conditions. Beyond AI data centers and EVs, the horizon for these 650V devices includes applications in solar microinverters and energy storage systems (ESS), where high-efficiency DC-to-AC conversion is essential for maximizing the output of renewable energy sources.

Experts predict that as manufacturing yields stabilize on the 200mm platform, we will see a rapid decline in the cost-per-watt of GaN devices, potentially reaching parity with high-end silicon MOSFETs by late 2027. This would trigger a second wave of adoption in consumer electronics, such as ultra-fast chargers for laptops and smartphones. The next technical frontier will likely involve the development of 800V and 1200V GaN devices to support the 800V battery architectures becoming common in high-performance electric vehicles.

The primary challenge remaining is the talent gap in wide-bandgap semiconductor engineering. As manufacturing returns to U.S. soil, the demand for specialized engineers who understand the nuances of GaN design and fabrication is expected to surge. Both onsemi and GlobalFoundries are likely to increase their investments in university partnerships and domestic training programs to ensure the long-term viability of this new manufacturing ecosystem.

A New Era of Domestic Power Innovation

The collaboration between onsemi and GlobalFoundries is more than just a business deal; it is a strategic realignment of the power semiconductor industry. By focusing on 650V GaN-on-silicon at the 200mm scale, the two companies are positioning themselves at the heart of the AI and EV revolutions. The key takeaways are clear: domestic manufacturing is back, GaN is ready for the mainstream, and the "power wall" is finally being breached.

In the context of semiconductor history, this partnership may be viewed as the moment when the United States reclaimed its lead in power electronics manufacturing. The long-term impact will be felt in more efficient data centers, faster-charging EVs, and a more resilient global supply chain. In the coming weeks and months, the industry will be watching closely for the first performance data from the 200mm pilot lines and for further announcements regarding the expansion of this GaN platform into even higher voltage ranges.

This content is intended for informational purposes only and represents analysis of current AI developments.

TokenRing AI delivers enterprise-grade solutions for multi-agent AI workflow orchestration, AI-powered development tools, and seamless remote collaboration platforms.
For more information, visit https://www.tokenring.ai/.

January 7, 2026
The Power Revolution: Onsemi and GlobalFoundries Join Forces to Fuel the AI and EV Era with 650V GaN

In a move that signals a tectonic shift in the semiconductor landscape, power electronics giant onsemi (NASDAQ: ON) and contract manufacturing leader GlobalFoundries (NASDAQ: GFS) have announced a strategic partnership to develop and mass-produce 650V Gallium Nitride (GaN) power devices. Announced in late December 2025, this collaboration is designed to tackle the two most pressing energy challenges of 2026: the insatiable power demands of AI-driven data centers and the need for higher efficiency in the rapidly maturing electric vehicle (EV) market.

The partnership represents a significant leap forward for wide-bandgap (WBG) materials, which are quickly replacing traditional silicon in high-performance applications. By combining onsemi's deep expertise in power systems and packaging with GlobalFoundries’ high-volume, U.S.-based manufacturing capabilities, the two companies aim to provide a resilient and scalable supply of GaN chips. As of January 7, 2026, the industry is already seeing the first ripples of this announcement, with customer sampling scheduled to begin in the first half of this year.

The technical core of this partnership centers on a 200mm (8-inch) enhancement-mode (eMode) GaN-on-silicon manufacturing process. Historically, GaN production was limited to 150mm wafers, which constrained volume and kept costs high. The transition to 200mm wafers at GlobalFoundries' Malta, New York, facility allows for significantly higher yields and better cost-efficiency, effectively moving GaN from a niche, premium material to a mainstream industrial standard. The 650V rating is particularly strategic, as it serves as the "sweet spot" for devices that interface with standard electrical grids and the 400V battery architectures currently dominant in the automotive sector.

Unlike traditional silicon transistors, which struggle with heat and efficiency at high frequencies, these 650V GaN devices can switch at much higher speeds with minimal energy loss. This capability allows engineers to use smaller passive components, such as inductors and capacitors, leading to a dramatic reduction in the overall size and weight of power supplies. Furthermore, onsemi is integrating these GaN FETs with its proprietary silicon drivers and controllers in a "system-in-package" (SiP) architecture. This integration reduces electromagnetic interference (EMI) and simplifies the design process for engineers, who previously had to manually tune discrete components from multiple vendors.

Initial reactions from the semiconductor research community have been overwhelmingly positive. Analysts note that while Silicon Carbide (SiC) has dominated the high-voltage (1200V+) EV traction inverter market, GaN is proving to be the superior choice for the 650V range. Dr. Aris Silvestros, a leading power electronics researcher, commented that the "integration of gate drivers directly with GaN transistors on a 200mm line is the 'holy grail' for power density, finally breaking the thermal barriers that have plagued high-performance computing for years."

For the broader tech industry, the implications are profound. AI giants and data center operators stand to be the biggest beneficiaries. As Large Language Models (LLMs) continue to scale, the power density of server racks has become a critical bottleneck. Traditional silicon-based power units are no longer sufficient to feed the latest AI accelerators. The onsemi-GlobalFoundries partnership enables the creation of 12kW power modules that fit into the same physical footprint as older 3kW units. This effectively quadruples the power density of data centers, allowing companies like NVIDIA (NASDAQ: NVDA) and Microsoft (NASDAQ: MSFT) to pack more compute power into existing facilities without requiring massive infrastructure overhauls.

In the automotive sector, the partnership puts pressure on established players like Wolfspeed (NYSE: WOLF) and STMicroelectronics (NYSE: STM). While these competitors have focused heavily on Silicon Carbide, the onsemi-GF alliance's focus on 650V GaN targets the high-volume "onboard charger" (OBC) and DC-DC converter markets. By making these components smaller and more efficient, automakers can reduce vehicle weight and extend range—or conversely, use smaller, cheaper batteries to achieve the same range. The bidirectional capability of these GaN devices also facilitates "Vehicle-to-Grid" (V2G) technology, allowing EVs to act as mobile batteries for the home or the electrical grid, a feature that is becoming a standard requirement in 2026 model-year vehicles.

Strategically, the partnership provides a major "Made in America" advantage. By utilizing GlobalFoundries' New York fabrication plants, onsemi can offer its customers a supply chain that is insulated from geopolitical tensions in East Asia. This is a critical selling point for U.S. and European automakers and government-linked data center projects that are increasingly prioritized by domestic content requirements and supply chain security.

The broader significance of this development lies in the global "AI Power Crisis." As of early 2026, data centers are projected to consume over 1,000 Terawatt-hours of electricity annually. The efficiency gains offered by GaN—reducing heat loss by up to 50% compared to silicon—are no longer just a cost-saving measure; they are a prerequisite for the continued growth of artificial intelligence. If the world is to meet its sustainability goals while expanding AI capabilities, the transition to wide-bandgap materials like GaN is non-negotiable.

This milestone also marks the end of the "Silicon Era" for high-performance power conversion. Much like the transition from vacuum tubes to transistors in the mid-20th century, the shift from Silicon to GaN and SiC represents a fundamental change in how we manage electrons. The partnership between onsemi and GlobalFoundries is a signal that the manufacturing hurdles that once held GaN back have been cleared. This mirrors previous AI milestones, such as the shift to GPU-accelerated computing; it is an enabling technology that allows the software and AI models to reach their full potential.

However, the rapid transition is not without concerns. The industry must now address the "talent gap" in power electronics engineering. Designing with GaN requires a different mindset than designing with Silicon, as the high switching speeds can create complex signal integrity issues. Furthermore, while the U.S.-based manufacturing is a boon for security, the global industry must ensure that the raw material supply of Gallium remains stable, as it is often a byproduct of aluminum and zinc mining and is subject to its own set of geopolitical sensitivities.

Looking ahead, the roadmap for 650V GaN is just the beginning. Experts predict that the success of this partnership will lead to even higher levels of integration, where the power stage and the logic stage are combined on a single chip. This would enable "smart" power systems that can autonomously optimize their efficiency in real-time based on the workload of the AI processor they are feeding. In the near term, we expect to see the first GaN-powered AI server racks hitting the market by late 2026, followed by a wave of 2027 model-year EVs featuring integrated GaN onboard chargers.

Another horizon for this technology is the expansion into consumer electronics and 5G/6G infrastructure. While 650V is the current focus, the lessons learned from this high-volume 200mm process will likely be applied to lower-voltage GaN for smartphones and laptops, leading to even smaller "brickless" chargers. In the long term, we may see GaN-based power conversion integrated directly into the cooling systems of supercomputers, further blurring the line between electrical and thermal management.

The primary challenge remaining is the standardization of GaN testing and reliability protocols. Unlike silicon, which has decades of reliability data, GaN is still building its long-term track record. The industry will be watching closely as the first large-scale deployments of the onsemi-GF chips go live this year to see if they hold up to the rigorous 10-to-15-year lifespans required by the automotive and industrial sectors.

The partnership between onsemi and GlobalFoundries is more than just a business deal; it is a foundational pillar for the next phase of the technological revolution. By scaling 650V GaN to high-volume production, these two companies are providing the "energy backbone" required for both the AI-driven digital world and the electrified physical world. The key takeaways are clear: GaN has arrived as a mainstream technology, U.S. manufacturing is reclaiming a central role in the semiconductor supply chain, and the "power wall" that threatened to stall AI progress is finally being dismantled.

As we move through 2026, this development will be remembered as the moment when the industry stopped talking about the potential of wide-bandgap materials and started delivering them at the scale the world requires. The long-term impact will be measured in gigawatts of energy saved and miles of EV range gained. For investors and tech enthusiasts alike, the coming weeks and months will be a critical period to watch for the first performance benchmarks from the H1 2026 sampling phase, which will ultimately prove if GaN can live up to its promise as the fuel for the future.

This content is intended for informational purposes only and represents analysis of current AI developments.

TokenRing AI delivers enterprise-grade solutions for multi-agent AI workflow orchestration, AI-powered development tools, and seamless remote collaboration platforms.
For more information, visit https://www.tokenring.ai/.

January 7, 2026
The High-Voltage Revolution: How ON Semiconductor’s SiC Dominance is Powering the 2026 EV Surge

As 2025 draws to a close, the global automotive industry is undergoing a foundational shift in its power architecture, moving away from traditional silicon toward wide-bandgap (WBG) materials like Silicon Carbide (SiC) and Gallium Nitride (GaN). At the heart of this transition is ON Semiconductor (Nasdaq: ON), which has spent the final quarter of 2025 cementing its status as the linchpin of the electric vehicle (EV) supply chain. With the recent announcement of a massive $6 billion share buyback program and the finalization of a $2 billion expansion in the Czech Republic, onsemi is signaling that the era of "range anxiety" is being replaced by an era of high-efficiency, AI-optimized power delivery.

The significance of this moment cannot be overstated. As of December 29, 2025, the industry has reached a tipping point where 800-volt EV architectures—which allow for ultra-fast charging and significantly lighter wiring—have moved from niche luxury features to the standard for mid-market vehicles. This shift is driven almost entirely by the superior thermal and electrical properties of SiC and GaN. By enabling power inverters to operate at higher temperatures and frequencies with minimal energy loss, these materials are effectively adding up to 7% more range to EVs without increasing battery size, a breakthrough that is reshaping the economics of sustainable transport.

Technical Breakthroughs: EliteSiC M3e and the Rise of Vertical GaN

The technical narrative of 2025 has been dominated by onsemi’s mass production of its EliteSiC M3e MOSFET technology. Unlike previous generations of planar SiC devices, the M3e architecture has successfully reduced conduction losses by a staggering 30%, a feat that was previously thought to require a more complex transition to trench-based designs. This efficiency gain is critical for the latest generation of traction inverters, which convert DC battery power into the AC power that drives the vehicle’s motors. Industry experts have noted that the M3e’s ability to handle higher power densities has allowed OEMs to shrink the footprint of the power electronics bay by nearly 20%, providing more cabin space and improving vehicle aerodynamics.

Parallel to the SiC advancement is the emergence of Vertical GaN technology, which onsemi unveiled in late 2025. While traditional GaN has been limited to lower-power applications like on-board chargers and DC-DC converters, Vertical GaN aims to bring GaN’s extreme switching speeds to the high-power traction inverter. This development is particularly relevant for the AI-driven mobility sector; as EVs become increasingly autonomous, the demand for high-speed data processing and real-time power modulation grows. Vertical GaN allows for the kind of rapid-response power switching required by AI-managed drivetrains, which can adjust torque and energy consumption in millisecond intervals based on road conditions and sensor data.

The transition from 6-inch to 8-inch (200mm) SiC wafers has also reached a critical milestone this month. By moving to larger wafers, onsemi and its peers are achieving significant economies of scale, effectively lowering the cost-per-die. This manufacturing evolution is what has finally allowed SiC to compete on a cost-basis with traditional silicon in the $35,000 to $45,000 EV price bracket. Initial reactions from the research community suggest that the 8-inch transition is the "Moore’s Law moment" for power electronics, paving the way for a 2026 where high-efficiency semiconductors are no longer a premium bottleneck but a commodity staple.

Market Dominance and Strategic Financial Maneuvers

Financially, onsemi is ending 2025 in a position of unprecedented strength. The company’s board recently authorized a new $6 billion share repurchase program set to begin on January 1, 2026. This follows a year in which onsemi returned nearly 100% of its free cash flow to shareholders, a move that has bolstered investor confidence despite the capital-intensive nature of semiconductor fabrication. By committing to return roughly one-third of its market capitalization over the next three years, onsemi is positioning itself as the "value play" in a high-growth sector, distinguishing itself from more volatile competitors like Wolfspeed (NYSE: WOLF).

The competitive landscape has also been reshaped by onsemi’s $2 billion investment in Rožnov, Czech Republic. With the European Commission recently approving €450 million in state aid under the European Chips Act, this facility is set to become Europe’s first vertically integrated SiC manufacturing hub. This move provides a strategic advantage over STMicroelectronics (NYSE: STM) and Infineon Technologies (OTC: IFNNY), as it secures a localized, resilient supply chain for European giants like Volkswagen and BMW. Furthermore, onsemi’s late-2025 partnership with GlobalFoundries (Nasdaq: GFS) to co-develop 650V GaN products indicates a multi-pronged approach to dominating both the high-power and mid-power segments of the market.

Market analysts point out that onsemi’s aggressive expansion in China has also paid dividends. In 2025, the company’s SiC revenue in the Chinese market doubled, driven by deep integration with domestic OEMs like Geely. While other Western tech firms have struggled with geopolitical headwinds, onsemi’s "brownfield" strategy—upgrading existing facilities rather than building entirely new ones—has allowed it to scale faster and more efficiently than its rivals. This strategic positioning has made onsemi the primary beneficiary of the global shift toward 800V platforms, leaving competitors scrambling to catch up with its production yields.

The Wider Significance: AI, Decarbonization, and the New Infrastructure

The growth of SiC and GaN is more than just an automotive story; it is a fundamental component of the broader AI and green energy landscape. In late 2025, we are seeing a convergence between EV power electronics and AI data center infrastructure. The same Vertical GaN technology that enables faster EV charging is now being deployed in the power supply units (PSUs) of AI server racks. As AI models grow in complexity, the energy required to train them has skyrocketed, making power efficiency a top-tier operational priority. Wide-bandgap semiconductors are the only viable solution for reducing the massive heat signatures and energy waste associated with the next generation of AI chips.

This development fits into a broader trend of "Electrification 2.0," where the focus has shifted from merely building batteries to optimizing how every milliwatt of power is used. The integration of AI-optimized power management systems—software that uses machine learning to predict power demand and adjust semiconductor switching in real-time—is becoming a standard feature in both EVs and smart grids. By reducing energy loss during power conversion, onsemi’s hardware is effectively acting as a catalyst for global decarbonization efforts, making the transition to renewable energy more economically viable.

However, the rapid adoption of these materials is not without concerns. The industry remains heavily reliant on a few key geographic regions for raw materials, and the environmental impact of SiC crystal growth—a high-heat, energy-intensive process—is under increasing scrutiny. Comparisons are being drawn to the early days of the microprocessor boom; while the benefits are immense, the sustainability of the supply chain will be the defining challenge of the late 2020s. Experts warn that without continued innovation in recycling and circular manufacturing, the "green" revolution could face its own resource constraints.

Looking Ahead: The 2026 Outlook and Beyond

As we look toward 2026, the industry is bracing for the full-scale implementation of the 8-inch wafer transition. This move is expected to further depress prices, potentially leading to a "price war" in the SiC space that could force consolidation among smaller players. We also expect to see the first commercial vehicles featuring GaN in the main traction inverter by late 2026, a milestone that would represent the final frontier for Gallium Nitride in the automotive sector.

Near-term developments will likely focus on "integrated power modules," where SiC MOSFETs are packaged directly with AI-driven controllers. This "smart power" approach will allow for even greater levels of efficiency and predictive maintenance, where a vehicle can diagnose a potential inverter failure before it occurs. Predictably, the next big challenge will be the integration of these semiconductors into the burgeoning "Vehicle-to-Grid" (V2G) infrastructure, where EVs act as mobile batteries to stabilize the power grid during peak demand.

Summary of the High-Voltage Shift

The events of late 2025 have solidified Silicon Carbide and Gallium Nitride as the "new oil" of the automotive and AI industries. ON Semiconductor’s strategic pivot toward vertical integration and aggressive capital returns has positioned it as the dominant leader in this space. By successfully scaling the EliteSiC M3e platform and securing a foothold in the European and Chinese markets, onsemi has turned the technical advantages of wide-bandgap materials into a formidable economic moat.

As we move into 2026, the focus will shift from proving the technology to perfecting the scale. The transition to 8-inch wafers and the rise of Vertical GaN represent the next chapter in a story that is as much about energy efficiency as it is about transportation. For investors and industry watchers alike, the coming months will be defined by how well these companies can manage their massive capacity expansions while navigating a complex geopolitical and environmental landscape. One thing is certain: the high-voltage revolution is no longer a future prospect—it is the present reality.

This content is intended for informational purposes only and represents analysis of current AI developments.

TokenRing AI delivers enterprise-grade solutions for multi-agent AI workflow orchestration, AI-powered development tools, and seamless remote collaboration platforms.
For more information, visit https://www.tokenring.ai/.

December 29, 2025
The Power Behind the Pulse: How SiC and GaN Are Breaking AI’s ‘Energy Wall’ in 2025

As we close out 2025, the semiconductor industry has reached a critical inflection point where the limitations of traditional silicon are no longer just a technical hurdle—they are a threat to the scaling of artificial intelligence. To keep pace with the massive energy demands of next-generation AI clusters and 800V electric vehicle (EV) architectures, the market has decisively shifted toward Wide Bandgap (WBG) materials. Silicon Carbide (SiC) and Gallium Nitride (GaN) have transitioned from niche "specialty" components to the foundational infrastructure of the modern digital economy, enabling power densities that were thought impossible just three years ago.

The significance of this development cannot be overstated: by late 2025, the "energy wall"—the point at which power delivery and heat dissipation limit AI performance—has been breached. This breakthrough is driven by the massive industrial pivot toward 200mm (8-inch) SiC manufacturing and the emergence of 300mm (12-inch) GaN-on-Silicon technologies. These advancements have slashed costs and boosted yields, allowing hyperscalers and automotive giants to integrate high-efficiency power stages directly into their most advanced hardware.

The Technical Frontier: 200mm Wafers and Vertical GaN

The technical narrative of 2025 is dominated by the industry-wide transition to 200mm SiC wafers. This shift has provided a roughly 20% reduction in die cost while increasing the number of chips per wafer by 80%. Leading the charge in technical specifications, the industry has moved beyond 150mm legacy lines to support 12kW Power Supply Units (PSUs) for AI data centers. These units, which leverage a combination of SiC for high-voltage AC-DC conversion and GaN for high-frequency DC-DC switching, now achieve the "80 PLUS Titanium" efficiency standard, reaching 96-98% efficiency. This reduces heat waste by nearly 50% compared to the silicon-based units of 2022.

Perhaps the most significant technical advancement of the year is the commercial launch of Vertical GaN (vGaN). Pioneered by companies like onsemi (NASDAQ:ON), vGaN differs from traditional lateral GaN by conducting current through the substrate. This allows it to compete directly with SiC in the 800V to 1200V range, offering the high switching speeds of GaN with the ruggedness of SiC. Meanwhile, Infineon Technologies (OTC:IFNNY) has stunned the research community by successfully shipping the first 300mm GaN-on-Silicon wafers, which yield 2.3 times more chips than the 200mm standard, effectively bringing GaN closer to cost parity with traditional silicon.

Market Dynamics: Restructuring and Global Expansion

The business landscape for WBG semiconductors has undergone a dramatic transformation in 2025. Wolfspeed (NYSE:WOLF), once struggling with debt and manufacturing delays, emerged from Chapter 11 bankruptcy in September 2025 as a leaner, restructured entity. Its Mohawk Valley Fab has finally reached 30% utilization, supplying critical SiC components to major automotive partners like Toyota (NYSE:TM) and Lucid (NASDAQ:LCID). This turnaround has stabilized the SiC supply chain, providing a reliable alternative to the diversifying European giants.

In Europe, STMicroelectronics (NYSE:STM) has solidified its dominance in the automotive sector with the full-scale operation of its Catania Silicon Carbide Campus in Italy. This facility is the first of its kind to integrate the entire supply chain—from substrate growth to back-end module assembly—on a single site. Simultaneously, onsemi is expanding its footprint with a €1.6 billion facility in the Czech Republic, supported by EU grants. These strategic moves are designed to counter the rising tide of China-based substrate manufacturers, such as SICC and Tankeblue, which now command a 35% market share in SiC substrates, triggering the first real price wars in the WBG sector.

AI Data Centers: The New Growth Engine

While EVs were the initial catalyst for SiC, the explosion of AI infrastructure has become the primary driver for GaN and SiC growth in late 2025. Systems like the NVIDIA (NASDAQ:NVDA) Blackwell and its successors require unprecedented levels of power density. The transition to 800V DC power distribution at the rack level mirrors the 800V transition in EVs, creating a massive cross-sector synergy. WBG materials allow for smaller, more efficient DC-DC converters that sit closer to the GPU, minimizing "line loss" and allowing data centers to reduce cooling costs by an estimated 40%.

This shift has broader implications for global sustainability. As AI energy consumption becomes a political and environmental flashpoint, the adoption of SiC and GaN is being framed as a "green" imperative. Regulatory bodies in the EU and North America have begun mandating higher efficiency standards for data centers, effectively making WBG semiconductors a legal requirement for new builds. This has created a "moat" for companies like Infineon and STM, whose advanced modules are the only ones capable of meeting these stringent new 2025 benchmarks.

The Horizon: 300mm Scaling and Chip-Level Integration

Looking ahead to 2026 and beyond, the industry is preparing for the "commoditization of SiC." As 200mm capacity becomes the global standard, experts predict a significant drop in prices, which will accelerate the adoption of SiC in mid-range and budget EVs. The next frontier is the full scaling of 300mm GaN-on-Silicon, which will likely push GaN into consumer electronics beyond just chargers, potentially entering the power stages of laptops and home appliances to further reduce global energy footprints.

Furthermore, we are seeing the early stages of "integrated power-on-chip" designs. Research labs are experimenting with growing GaN layers directly onto silicon logic wafers. If successful, this would allow power management to be integrated directly into the AI processor itself, further reducing latency and energy loss. Challenges remain, particularly regarding the lattice mismatch between different materials, but the progress made in 2025 suggests these hurdles are surmountable within the next three to five years.

Closing the Loop on the 2025 Power Revolution

The state of the semiconductor market in late 2025 confirms that the era of "Silicon Only" is over. Silicon Carbide has claimed its crown in the high-voltage automotive and industrial sectors, while Gallium Nitride is rapidly conquering the high-frequency world of AI data centers and consumer tech. The successful transition to 200mm manufacturing and the emergence of 300mm GaN have provided the economies of scale necessary to fuel the next decade of technological growth.

As we move into 2026, the key metrics to watch will be the pace of China’s substrate expansion and the speed at which vGaN can challenge SiC’s 1200V dominance. For now, the integration of these advanced materials has successfully averted an energy crisis in the AI sector, proving once again that the most profound revolutions in computing often happen in the quiet, high-voltage world of power electronics.

This content is intended for informational purposes only and represents analysis of current AI developments.

TokenRing AI delivers enterprise-grade solutions for multi-agent AI workflow orchestration, AI-powered development tools, and seamless remote collaboration platforms.
For more information, visit https://www.tokenring.ai/.

December 19, 2025
Powering the Future: onsemi Navigates a Pivotal Shift in the EV and Industrial Semiconductor Landscape

As of December 19, 2025, ON Semiconductor (NASDAQ: ON), commonly known as onsemi, finds itself at a critical juncture in the global semiconductor market. After navigating a challenging 2024 and a transitional 2025, the company is emerging as a stabilizing leader in the power semiconductor space. While the broader automotive and industrial sectors have faced a prolonged "inventory digestion" phase, onsemi's strategic pivot toward high-growth AI data center power solutions and its aggressive vertical integration in Silicon Carbide (SiC) have caught the attention of Wall Street analysts.

The immediate significance of onsemi’s current position lies in its resilience. Despite a cyclical downturn that saw revenue contract year-over-year, the company has maintained steady gross margins in the high 30% range and recently authorized a massive $6 billion share repurchase program. This move, combined with a flurry of analyst price target adjustments, signals a growing confidence that the company has reached its "trough" and is poised for a significant recovery as it scales its next-generation 200mm SiC manufacturing capabilities.

Technical Milestones and the 200mm SiC Transition

The technical narrative for onsemi in late 2025 is dominated by the transition from 150mm to 200mm (8-inch) Silicon Carbide wafers. This shift is not merely a change in size but a fundamental leap in manufacturing efficiency and cost-competitiveness. By moving to larger wafers, onsemi expects to significantly increase the number of chips per wafer, effectively lowering the cost of high-voltage power semiconductors essential for 800V electric vehicle (EV) architectures. The company has confirmed it is on track to begin generating meaningful revenue from 200mm production in early 2026, a milestone that industry experts view as a prerequisite for maintaining its roughly 24% share of the global SiC market.

In addition to SiC, onsemi has made significant strides in its Field Stop 7 (FS7) IGBT technology. These devices are designed for high-power industrial applications, including solar inverters and energy storage systems. The FS7 platform offers lower switching losses and higher power density compared to previous generations, allowing for more compact and efficient energy infrastructure. Initial reactions from the industrial research community have been positive, noting that these advancements are crucial for the global transition toward renewable energy grids that require robust, high-efficiency power management.

Furthermore, onsemi’s "Fab Right" strategy—a multi-year effort to consolidate manufacturing into fewer, more efficient, vertically integrated sites—is beginning to pay technical dividends. By controlling the entire supply chain from substrate growth to final module assembly, the company has achieved a level of quality control and supply assurance that few competitors can match. This vertical integration is particularly critical in the SiC market, where material scarcity and processing complexity have historically been major bottlenecks.

Competitive Dynamics and the AI Data Center Pivot

While the EV market has seen a slower-than-expected recovery in North America and Europe throughout 2025, onsemi has successfully offset this weakness by aggressively entering the AI data center market. In a landmark collaboration announced earlier this year with NVIDIA (NASDAQ: NVDA), onsemi is now supporting 800VDC power architectures for next-generation AI server racks. These high-voltage systems are designed to minimize energy loss as power moves from the grid to the GPU, a critical factor for data centers that are increasingly constrained by power availability and cooling costs.

This pivot has placed onsemi in direct competition with other power giants like STMicroelectronics (NYSE: STM) and Infineon Technologies (OTCMKTS: IFNNY). While STMicroelectronics currently leads the SiC market by a small margin, onsemi’s recent deal with GlobalFoundries (NASDAQ: GFS) to develop 650V Gallium Nitride (GaN) power devices suggests a broadening of its portfolio. GaN technology is particularly suited for the ultra-compact power supply units (PSUs) used in AI servers, providing a complementary offering to its high-voltage SiC products.

The competitive landscape is also being reshaped by onsemi’s focus on the Chinese EV market. Despite geopolitical tensions, onsemi has secured several major design wins with leading Chinese OEMs who are leading the charge in 800V vehicle adoption. By positioning itself as a key supplier for the most technologically advanced vehicles, onsemi is creating a strategic moat that protects its market share against lower-cost competitors who lack the high-voltage expertise and integrated supply chain of the Arizona-based firm.

Wider Significance for the AI and Energy Landscape

The evolution of onsemi reflects a broader trend in the technology sector: the convergence of AI and energy efficiency. As AI models become more computationally intensive, the demand for sophisticated power management has shifted from a niche industrial concern to a primary driver of the semiconductor industry. onsemi’s ability to double its AI-related revenue year-over-year in 2025 highlights how critical power semiconductors have become to the "AI Gold Rush." Without the efficiency gains provided by SiC and GaN, the energy requirements of modern data centers would be unsustainable.

This development also underscores the changing nature of the EV market. The "hype phase" of 2021-2023 has given way to a more mature, performance-oriented market where efficiency is the primary differentiator. onsemi’s focus on 800V systems aligns with the industry’s shift toward faster charging and longer range, proving that the underlying technology is still advancing even if consumer adoption rates have hit a temporary plateau.

However, the path forward is not without concerns. Analysts have pointed to the risks of overcapacity as onsemi, Wolfspeed (NYSE: WOLF), and others all race to bring massive SiC manufacturing hubs online. The Czech Republic hub and the expansion in Korea represent multi-billion-dollar bets that demand will eventually catch up with supply. If the EV recovery stalls further or if AI power needs are met by alternative technologies, these capital-intensive investments could pressure the company’s balance sheet in the late 2020s.

Future Developments and Market Outlook

Looking ahead to 2026 and beyond, the primary catalyst for onsemi will be the full-scale ramp of its 200mm SiC production. This transition is expected to unlock a new level of profitability, allowing the company to compete more aggressively on price while maintaining its premium margins. Experts predict that as the cost of SiC modules drops, we will see a "trickle-down" effect where high-efficiency power electronics move from luxury EVs and high-end AI servers into mid-range consumer vehicles and broader industrial automation.

Another area to watch is the expansion of the onsemi-GlobalFoundries partnership. The integration of GaN technology into onsemi’s "EliteSiC" ecosystem could create a "one-stop shop" for power management, covering everything from low-power consumer electronics to megawatt-scale industrial grids. Challenges remain, particularly in the yield rates of 200mm SiC and the continued geopolitical complexities of the semiconductor supply chain, but onsemi’s diversified approach across AI, automotive, and industrial sectors provides a robust buffer.

In the near term, the market will be closely watching onsemi’s Q4 2025 earnings report and its initial guidance for 2026. If the company can demonstrate that its AI revenue continues to scale while its automotive business stabilizes, the consensus price target of $59.00 may prove to be conservative. Many analysts believe that as the "inventory digestion" cycle ends, onsemi could see a rapid re-rating of its stock price, potentially reaching the $80-$85 range as investors price in the 2026 recovery.

Summary of the Power Semiconductor Landscape

In conclusion, ON Semiconductor has successfully navigated one of the most volatile periods in recent semiconductor history. By maintaining financial discipline through its $6 billion buyback program and "Fab Right" strategy, the company has prepared itself for the next leg of growth. The shift from a purely automotive-focused story to a diversified power leader serving the AI data center market is a significant milestone that redefines onsemi’s role in the tech ecosystem.

As we move into 2026, the key takeaways for investors and industry observers are the company’s technical leadership in the 200mm SiC transition and its critical role in enabling the energy-efficient AI infrastructure of the future. While risks regarding global demand and manufacturing yields persist, onsemi’s strategic positioning makes it a bellwether for the broader health of the power semiconductor market. In the coming weeks, all eyes will be on the company’s execution of its manufacturing roadmap, which will ultimately determine its ability to lead the next generation of energy-efficient technology.

This content is intended for informational purposes only and represents analysis of current AI and semiconductor developments.

TokenRing AI delivers enterprise-grade solutions for multi-agent AI workflow orchestration, AI-powered development tools, and seamless remote collaboration platforms.
For more information, visit https://www.tokenring.ai/.

December 19, 2025